vishay tsml1000/1020/1030/1040 document number 81033 rev. 6, 21-may-03 vishay semiconductors www.vishay.com 1 16852 tsml1000 tsml1030 tsml1040 TSML1020 extented power ir emitting diode in smd package description tsml1000 series are high efficiency infrared emitting diodes in gaalas on gaas technology molded in clear smd package. this technology represents best performance for radi- ant power under pulse conditions, forward voltage and reliability. features ? outstanding high radiant power low forward voltage suitable for high pulse current operation angle of half intensity ? = 12 peak wavelength p = 950 nm high reliability matched phototransistor series: temt1000 versatile terminal configurations applications for remote control photointerrupters punched tape readers encoder absolute maximum ratings t amb = 25 c, unless otherwise specified basic characteristics t amb = 25 c, unless otherwise specified t amb = 25 c, unless otherwise specified parameter test condition symbol value unit reverse voltage v r 5 v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 1.0 a power dissipation p v 190 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5sec t sd <260 c thermal resistance junction/ambient r thja 400 c parameter test condition symbol min ty p. max unit forward voltage i f = 20 ma, t p = 20 ms v f 1.2 1.5 v i f = 1 a, t p = 100 s v f 2.6 v temp. coefficient of v f i f = 1 ma tk vf - 1.85 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 25 pf radiant intensity i f = 20 ma, t p = 20 ms i e 3 7 mw/sr
www.vishay.com 2 document number 81033 rev. 6, 21-may-03 vishay tsml1000/1020/1030/1040 vishay semiconductors typical characteristics (t amb = 25 c unless otherwise specified) radiant power i f = 100 ma, t p = 20 ms e 35 mw temp. coefficient of e i f = 20 ma tk e - 0.6 %/k angle of half intensity ? 12 deg peak wavelength i f = 100 ma p 950 nm spectral bandwidth i f = 100 ma ? 50 nm temp. coefficient of p i f = 100 ma tk p 0.2 nm/k rise time i f = 100 ma t r 800 ns fall time i f = 100 ma t f 800 ns parameter test condition symbol min ty p. max unit figure 1. power dissipation vs. ambient temperature figure 2. forward current vs. ambient temperature p - power dissipation ( mw ) v 0 20 40 60 80 100 120 140 160 180 200 t amb - ambient temperature ( c) 16187 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 16188 i - forward current ( ma ) f 100 90 80 70 60 50 40 30 20 10 0 t amb - ambient temperature ( c) figure 3. pulse forward current vs. pulse duration figure 4. forward current vs. forward voltage 10 100 1000 10000 0.01 0.10 1.00 10.00 100.00 t p - pulse duration ( ms ) 14335 i - forward current ( ma ) f t p / t = 0.01 0.05 0.2 0.5 1.0 0.1 0.02 v f - forward voltag e(v) 13600 10 1 10 0 10 2 10 3 10 4 t p = 100 s t p / t = 0.001 4 3 2 1 0 i - forward current ( ma ) f
vishay tsml1000/1020/1030/1040 document number 81033 rev. 6, 21-may-03 vishay semiconductors www.vishay.com 3 figure 5. relative forward voltage vs. ambient temperature figure 6. radiant intensity vs. forward current figure 7. radiant power vs. forward current 0.7 0.8 0.9 1.0 1.1 1.2 v - relative forward voltage frel 94 7990 e i f =10ma t amb - ambient temperature ( c) 100 80 60 40 20 0 16189 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 i f - forward current ( ma ) i - radiant intensity ( mw/sr ) e - radiant power ( mw ) e i f - forward current ( ma ) 13602 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 -10 10 50 0 100 0 0.4 0.8 1.2 1.6 i, e rel e rel 140 94 7993 e i f =20ma t amb - ambient temperature ( c) 900 950 0 0.25 0.5 0.75 1.0 1.25 - wavelength ( nm ) 1000 94 7994 e - relative radiant power ? i f = 100 ma e rel 0.4 0.2 0 0.2 0.4 s - relative sensitivity rel 0.6 94 8243 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0
www.vishay.com 4 document number 81033 rev. 6, 21-may-03 vishay tsml1000/1020/1030/1040 vishay semiconductors package dimensions in mm tsml1000 package dimensions in mm TSML1020 16159 16160
vishay tsml1000/1020/1030/1040 document number 81033 rev. 6, 21-may-03 vishay semiconductors www.vishay.com 5 package dimensions in mm tsml1030 package dimensions in mm tsml1040 16228 16760
www.vishay.com 6 document number 81033 rev. 6, 21-may-03 vishay tsml1000/1020/1030/1040 vishay semiconductors reel dimensions 18033
vishay tsml1000/1020/1030/1040 document number 81033 rev. 6, 21-may-03 vishay semiconductors www.vishay.com 7 taping tsml1000 taping TSML1020 18030 18031
www.vishay.com 8 document number 81033 rev. 6, 21-may-03 vishay tsml1000/1020/1030/1040 vishay semiconductors taping tsml1030 precautions for use 1. over-current-proof customer must apply resistors for protection, other- wise slight voltage shift will cause big current change (burn out will happen). 2. storage 2.1 storage temperature and rel. humidity conditions are: 5c to 35c, r.h. 60% 2.2 floor life must not exceed 168 h, acc. to jedec level 3, j-std-020. once the package is opened, the products should be used within a week. otherwise, they should be kept in a damp proof box with desiccant. considering tape life, we suggest to use products within one year from production date. 2.3 if opened more than one week in an atmosphere 5c to 35c, r.h. 60%, devices should be treated at 60c 5c for 15 hrs. 2.4 if humidity indicator in the package shows pink color (normal blue), then devices should be treated with the same conditions as 2.3 reflow solder profile 18032 60 80 100 120 140 160 180 200 220 240 260 0 20 40 60 80 100 120 140 160 180 200 220 time ( s ) temperature ( c ) 17172 q + 5 q c/s 5 s 60 s to 120 s ? 5 q c/s
vishay tsml1000/1020/1030/1040 document number 81033 rev. 6, 21-may-03 vishay semiconductors www.vishay.com 9 ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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